Publication Details

Abstract

Low-noise amplifiers (LNAs) play a critical role in modern wireless communication systems by enhancing weak signals while minimizing added noise. This project focuses on the design and analysis of a high-performance LNA using a Gallium Nitride High Electron Mobility Transistor (GaN-HEMT). GaN-HEMT devices are widely recognized for their superior properties, including high electron mobility, high breakdown voltage, and excellent thermal stability, making them ideal for high-frequency and high-power applications. The proposed LNA design aims to achieve optimal gain, low noise figure, and high linearity across the targeted frequency range. Key design considerations include impedance matching, stability analysis, and noise optimization using appropriate matching networks. Simulation tools are utilized to evaluate performance parameters such as gain (S-parameters), noise figure, return loss, and stability factors.