Publication Details

Abstract

This article talks about a 12–30 GHz low noise am- plifier (LNA) Monolithic Microwave Integrated Circuit (MMIC) that uses 150-nm GaN-on-SiC technology. There are three booster stages in it. The impedance matching network between the second and third amplifier stages is a high-pass filter network. This can widen the working band and change how flat the gain is. To make sure, the LNA is created. From 24 to 30 GHz, the simulated data show a linear gain of more than 21dB and a noise figure of less than 2.2dB. On the other hand, the three-stage MMIC LNA is very small, measuring only 2.2 by 0.8 mm2. The amplifier’s bias circuits are set up on one side, which can make it easier to integrate when it’s used in the front-end module (FEM). This GaN-on-SiC LNA MMIC has a low noise figure and an easy- to-understand design, making it useful for millimeter-wave uses.